Utilizing Gate 1 for the RF signal and Gate 2 for the Local Oscillator (LO) to produce an Intermediate Frequency (IF).
Modern silicon N-channel dual-gate MOSFETs (though they often come in SOT packages). 3sk41 datasheet
): Typically ranges between 10 to 20 mS (millisiemens), indicating high sensitivity. Generally around 5.0 pF. Reverse Transfer Capacitance ( Crsscap C r s s Utilizing Gate 1 for the RF signal and
When reviewing the 3SK41 datasheet, the absolute maximum ratings are critical to prevent component failure. Operating beyond these limits can cause permanent damage. Drain-Source Voltage Gate 1-Source Voltage Gate 2-Source Voltage Drain Current Total Power Dissipation Storage Temperature -55 to +150 3. Electrical Characteristics Under typical operating conditions (usually at ), the 3SK41 exhibits the following performance: Forward Transfer Admittance ( Generally around 5
The is a classic N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that has long been a staple in high-frequency applications . Primarily designed for VHF (Very High Frequency) amplifiers and mixers, it remains a point of interest for hobbyists, vintage radio restorers, and engineers working with legacy RF circuits.
Minimizes loading on preceding stages. 2. Technical Specifications (Absolute Maximum Ratings)